MSCSM120AM31CT1AG
Full SiC MOSFET 1200V / 71A
| ID Code: | 186150 |
| Производитель: | Microsemi / Microchip Technology |
| Цена с НДС : | 142,4186 € |
| Цена без НДС : | 117,7013 € |
| VAT: | 21 % |
| Доступность: | по запросу |
| Общий запас: | 0 штук |
| Маркировка изготовителя: | MSCSM120AM31CT1AG |
| Единица:: | штук |
| !_prehled mnozstevnich slev_! | Количество | Цена без НДС | Цена с НДС |
| 1 + | 117,7013 € | 142,4186 € |
| 3 + | 116,0869 € | 140,4651 € |
| 5 + | 115,2796 € | 139,4884 € |
| 10 + | 114,4724 € | 138,5116 € |
• SiC Power MOSFET - High speed switching, - Low RDS(on), - Ultra low loss
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
• SiC Schottky Diode, - Zero reverse recovery, - Zero forward recovery, - Temperature Independent switching behavior, - Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Основная информация:
| Маркировка изготовителя | MSCSM120AM31CT1AG |
| Type of casing: | MODUL |
| Kейс: | !_modul-sp1f_! |
| Kategorie | Full SiC (MOS+D) |
| Конфигурация: | !_half bridge_! |
| Тип материала: | !_sic_! |
| RoHS | Да |
| REACH | Hет |
| NOVINKA | A |
| RoHS1 | Ano |
Упаковка и вес:
| Единица: | штук |
| Вес: | 80 [g] |
| Тип упаковки: | BOX |
| Малый пакет (количество единиц): | 1 |
Электрофизические параметры:
| Udc (URRM, UCEO, Umax) | 1200 [V] |
| Idc max (Tc/Ta=25÷160°C) | 89 [A] |
| Idc max (Tc/Ta=25°C) | 89 [A] |
| Idc max (Tc/Ta=80÷89°C) | 71 [A] |
| Uisol (@25°C/1min/50Hz) | 4000 [V] |
| UF (maximum forward voltage) | 1.8 [VDC] |
| Pd -s chladičem (Tc=25°C) | 395 [W] |
| Input Logic Level (Ugs level) | 20V |
| Rds(on) 10V (Ugs=10V) | 31 [mΩ] |
| trr recovery time (If=Inom.,@25°C) | 90 [ns] |
| tr (Turn-on / rise time) | 30 [ns] |
| tf (turn-off=fall time) | 25 [ns] |
| Ft (transition/operation frequency) (@Inom.) | 0.04 [MHz] |
| Qg (Total Gate Charge) | 232 [nC] |
| Cin/CL Load Capacitance | 3020 pF |
Тепловые и механические параметры:
| Tmin (mинимальная рабочая температура) | -40 [°C] |
| Tmax (mаксимальная рабочая температура) | 150 [°C] |
| Rthjc1 IGBT | 0.38 [°C/W] |
| Rthjc2 Dioda, Tyristor | 0.9 [°C/W] |
| ПИН-Размеры выводов | 0.00 [mm] |